Join Us at the AVS 23rd International Conference on Atomic Layer Deposition (ALD 2023) featuring the 10th International Atomic Layer Etching Workshop (ALE 2023)

The 2023 AVS ALD/ALE Conference will be held in-person at the Hyatt Regency Bellevue in Bellevue, Washington, USA on July 23–26, with many tutorials and presentations dedicated to atomic layer etching and atomic layer deposition.

During ALD/ALE Conference, Oxford Instruments team will be giving a series of presentations:

ALD & ALE Presentations

Monday July 24^th at 2:45pm (PST)

Student Award Finalist Talk: Plasma Isotropic ALE of GaN Using SF6 Plasma and TMA 

Speaker: Nicholas Chittock, W. Kessels, Eindhoven University of Technology, The Netherlands; H. Knoops, Oxford Instruments Plasma Technology, Netherlands; S. Elliott, Schrödinger, Ireland; A. Mackus, Eindhoven University of Technology, The Netherlands

Tuesday July 25^th at 2:30pm (PST)

Talk Title: High Deposition Rate NbN and TiN for Superconducting Resonators for Quantum Devices by PEALD

Speaker: Louise Bailey, D. Besprozvannyy, Oxford Instruments Plasma Technology, UK; R. Renzas, Oxford Instruments Plasma Technology; H. Knoops, Oxford Instruments Plasma Technology, Netherlands; M. Powell, Oxford Instruments Plasma Technology, UK

Tuesday July 25^th at 5:00pm (PST)

Talk Title: Plasma Enhanced Atomic Layer Deposition of Niobium Nitride for Scalable Quantum Device Fabrication

Speaker: Yi Shu, Oxford Instruments Plasma Technology, UK; C. Lennon, University of Glasgow, UK; Z. Ren, Oxford Instruments Plasma Technology, UK; H. Knoops, Oxford Instruments Plasma Technology, UK, Eindhoven University of Technology, Netherlands; F. Morini, A. Kurek, T. Hemakumara, Oxford Instruments Plasma Technology, UK; R. Hadfield, University of Glasgow, UK

Wednesday July 26^th at 11:30am (PST)

Talk Title: Speedy and Smooth Atomic Layer Etching for Silicon Carbide with DC Bias-Pulsing

Speaker: Julian Michaels, University of Illinois at Urbana-Champaign; N. Delegan, Argonne National Laboratory, USA; Y. Tsaturyan, University of Chicago; R. Renzas, Oxford Instruments; D. Awschalom, University of Chicago; G. Eden, University of Illinois at Urbana-Champaign; J. Heremans, Argonne National Laboratory