International Conference on Silicon Carbide and related materials 2023
ICSCRM 2023 conference, dedicated to the latest achievements in the area of wide-bandgap semiconductors focusing on silicon carbide (SiC) and other wide-bandgap semiconductors, will be held on the 17-22 of September in Sorrento, Italy.
The Oxford Instruments Plasma Technology experts on Silicon Carbide and related topics are looking forward to meeting with you at our booth no 3 (the Ulisse and Tritone Foyer, Floor A) during the event and discussing your current work and workflows. If you would like to book a meeting with us at the show, please complete the form below.
During the ICSCRM, Dr Andrew Newton, Applications Development Manager at Oxford Instruments Plasma Technology, will be giving a talk on Thursday, September 21st, 9:00 - 9:20 am.
Session 22B: Material 3: Surface processing and epi growth
LOCATION: Ulisse
Talk Title: Characterisation of SiC surfaces prepared by PPDE
In this work, we examine a number of techniques to understand the role that polishing plays in removing sub and near-surface damage in SiC substrates.
Visit ICSCRM Program